Abstract
AbstractThin films of SrVO3 have been grown on (100)LaAlO3 and TiN buffered (100)Si substrates by pulsed laser deposition. The films were deposited in temperature range of 450°C – 750°C and under ambient oxygen pressure between 101−6 and 101−2 Torr. Their structural properties were characterized using a four-circle x-ray diffractometer. High quality SrVO3 films were obtained at growth temperatures above 500°C without post annealing. Heteroepitaxial relationship of < 100 >SrVo3 ∥ < 100 >LaAOl3 and <100>SrVo3∥ < 100 >TiN ∥ < 100 >Si were observed for films deposited at ≤ 550°C. X-ray photoelectron spectroscopic studies of the films suggest that the vanadium is mainly tetravalent and pentavalent. Charge transport measurements show that the films vary from semiconducting to highly conducting for different growth conditions. Resistivity of a few micro-ohm cm was recorded for some of the epitaxial SrVO3 films.
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