Abstract
ABSTRACTEpitaxial (110) titanium nitride films have been grown on (100) GaAs by pulsed laser deposition technique. The film quality has been found to be a strong function of the processing parameters. The films have been characterized using four point probe resistivity technique, Raman spectroscopy, X-ray diffraction analysis, and transmission electron Microscopy. Single crystal films were obtained at the deposition temperature 450° C and the room temperature resistivity was found to be 49.7 ΜΩ-cm. The epitaxial orientation relationship of the TiN films with the substrate is given by [001]TiN//[110] GaAs and [īlO]TiN// [līO]GaAs. Modeling studies have been performed to characterize the domain epitaxial growth in these large mismatch systems.
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