Abstract
We have studied the deposition of BaTiO3 (BTO) thin films on various substrates. Three representative substrates were selected from different types of material systems: (i) SrTiO3 single crystals as a typical oxide, (ii) Si wafers as a semiconductor, and (iii) Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.
Highlights
Pulsed laser deposition or PLD is a reliable method to fabricate oxide thin films [1, 2]
Deposition was done at an oxygen partial pressure of 100 mTorr using a laser pulse frequency of 10 Hz at a temperature of 750◦C
For the STO substrates, a 50 nmthick SRO buffer layer was first deposited at 700◦C using an oxygen pressure of 90 mTorr which was used as a bottom electrode for polarization measurements of the BTO film
Summary
Pulsed laser deposition or PLD is a reliable method to fabricate oxide thin films [1, 2]. Deposition parameters play an important role in achieving good-quality thin films. Key PLD deposition parameters include deposition temperature, laser pulse repetition rate, laser energy, and ambient gas pressure. All of these conditions depend on the lattice parameters and atomic coordinations of the substrate and thin film material. Previous experiments have shown that the substrate can be adjusted to change the quality and nanostructure of the films to satisfy different needs [3]. Understanding the behavior of oxide films on various substrates is a meaningful approach to control the film quality and performance
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