Abstract
Antimony selenosulfide, Sb2(SxSe1−x)3, has been considered as a promising light harvesting material for low-cost, non-toxic, and stable solar cell applications. However, current preparation methods of Sb2(SxSe1−x)3 suffer from low-quality films, which hampers the performance improvement in Sb2(SxSe1−x)3-based solar cells. Herein, we develop a pulsed laser deposition technique to fabricate antimony selenosulfide films with flat and compact surface morphology and high crystallinity. The composition of the as-obtained films can be conveniently tuned via varying molar ratios of Sb2S3 and Se in targets. At optimized conditions, we fabricate planar heterojunction solar cells and then obtain a significantly improved power conversion efficiency of 7.05%. Our research offers a facile and robust preparation method for Sb2(SxSe1−x)3 films with enhanced photovoltaic properties.
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