Abstract
Hybrid perovskite solar cells (PSCs) have been intensively studied in recent years because of their high efficiency and low costs. For PSCs, the electron transport layer (ETL) is a key for its photoelectric conversion efficiency. Here we demonstrate the application of amorphous InGaZnO4 thin films as ETL for efficient PSCs by pulsed laser deposition (PLD). The PSC device using such InGaZnO4 amorphous film as ETL has achieved an efficiency of 15.1%. The outstanding performance is attributed to the excellent properties of amorphous InGaZnO4 oxide thin films, including high electron mobility and high transparency, what is more, the electronic properties of the films can be controlled by changing the partial pressure of oxygen in the deposition chamber and post-deposition annealing process. Our result will be helpful for preparation of large area PSCs and other opto-electric devices at low temperature by physical vapor deposition method.
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