Abstract
AbstractThin films of low molecular weight electroluminescence (EL) materials, Alq3 (aluminum tirs-8-hydoroxyquinline), TPD (N,N'-diphenyl-N,N'-bis (3methylphenyl)-(1,1'-biphenyle)-4, 4'-diamine) were deposited by pulsed laser ablation (PLA) method using KrF excimer laser and Nd:YAG laser. Optical absorption property, surface morphology and photoluminescence of the films were investigated. Alq3 films by Nd:YAG laser show slight absorption at around 400 nm, and TPD films by either KrF laser or Nd:YAG laser showed absorption at 320 nm and 360 nm. It was found that TPD thin films for EL devices can be deposited by PLAmethod usig Nd:YAG laser.
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