Abstract
Al-doped ZnO (AZO) films were deposited on glass and polycarbonate (PC) at room temperature by using pulsed Nd:YAG laser at 355 nm. AZO thin films were obtained for both substrates at laser fluences from 2 to 5 J/cm2 in O2 partial pressure of 2.1 Pa. The effects of laser fluence on the structural, electrical, and optical properties of the films were investigated. The films with lowest resistivity and highest transmittance have been obtained at 2 J/cm2. The resistivities were 2.29×10−3 Ω cm for AZO on glass and 1.49×10−3 Ω cm for AZO on PC. With increasing laser fluence, the deposited films have lower crystallinity, higher resistivity, and smaller optical bandgap.
Highlights
Al-doped ZnO (AZO) films are promising transparent conducting oxides (TCOs) that can be used in optoelectronics devices
AZO thin films were deposited on glass and PC substrates at room temperature by using a 355-nm laser
The best films were obtained at 2 J∕cm[2], where the resistivities were 2.29 × 10−3 Ω cm for AZO on glass and 1.49 × 10−3 Ω cm for AZO on PC
Summary
Al-doped ZnO (AZO) films are promising transparent conducting oxides (TCOs) that can be used in optoelectronics devices. Tan et al.: Pulsed laser deposition of Al-doped ZnO films on glass and polycarbonate accommodate polymer substrates. A 355-nm laser, which is expected to produce less energetic plasma, was used for deposition of AZO thin films onto glass and PC substrates.
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