Abstract
A sample chamber has been constructed for studying the growth of thin films by pulsed laser deposition in situ with surface X-ray diffraction. The achievable temperature ranges from room temperature to 1073 K in a controlled oxygen environment. The partial pressure of the oxygen background gas covers the range from 0.1 to 10(5) Pa. The first results, showing intensity oscillations in the diffracted signal during homoepitaxial deposition of SrTiO(3), are presented.
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