Pulsed laser ablation and deposition of silicon

Abstract

A KrF laser was used to ablate a polycrystalline Si target for deposition of Si on MgO and GaAs substrates at room temperature. The deposition was performed in 10−8 mbar, with two types of laser beams: a homogeneous beam being imaged onto the target (2.9 J/cm2), and a non-homogeneous which is nearly focused (2 J/cm2, 6.5 J/cm2). In both cases, the beam was scanned over an area of 1 cm2. For the homogenous beam, we observed only a limited number of droplets (<0.1 μm). A high number of micron-sized (<5 μm) droplets were observed on the film by the higher fluence nonhomogeneous laser beam. Raman spectroscopy showed that the micron-sized droplets are crystalline while the film is amorphous. The generation of the large droplets is most likely related to the cone structures formed on the ablated target. We also compared cone formation on a polycrystalline Si target and a single crystalline Si wafer, using multiple laser pulses onto a single spot.