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Abstract
Eco-friendly and facile zinc oxide (ZnO) synthesis of zinc-oxide-based nanomaterials with specific properties is a great challenge due to its excellent industrial applications in the field of semiconductors and solar cells. In this paper, we report the production of zinc oxide thin films at relatively low deposition temperature employing a simple and non-toxic method at low substrate temperature: pulsed laser ablation, as a first step for developing a n-ZnO/p-Si heterojunction. Single-phase n-type zinc oxide thin films are confirmed by an X-ray diffraction (XRD) pattern revealed by the maximum diffraction intensity from the (002) plane. Absorbance measurements indicate an increase in the band gap energy close to the bulk ZnO. A 350 °C substrate temperature led to obtaining a highly porous film with high crystallinity and high bandgap, showing good premises for further applications.
Highlights
Over the past decades, the advancement in the field of thin films technology paved the road for development of various semiconductor-based devices [1,2,3]
Laser ablation has been a well-studied techniques since its early days and it has been showing the premises to be implemented for the production of n-type zinc oxide (ZnO) thin films
As an initial step towards our goal, in this study we focus on the preparation of highly oriented ZnO thin films by pulsed laser deposition at relatively low substrate temperatures
Summary
The advancement in the field of thin films technology paved the road for development of various semiconductor-based devices [1,2,3] In this context, zinc oxide (ZnO) thin films and nanostructures attracted a great interest, owing to their unique properties such as large exciton binding energy (60 meV), direct wide-bang gap of about 3.37 eV at room temperature, high optical transparency in the visible region, low electrical resistivity, as well as high electrochemical stability, high electron mobility, non-toxicity, and abundance in nature, being used in a wide range of application in the UV region of optoelectronic devices [1,2,3,4,5,6,7,8,9,10,11,12,13]. The structure, morphology, composition, and optical properties of the obtained films are characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS) UV-VIS measurements
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