Abstract
A graphitic capping layer was successfully formed on top of Cu interconnects at room temperature, using a pulsed KrF laser. The change in temperature of the Cu line was maintained below 380 °C during laser irradiation with a fluence of 312.5 mJ/cm2. The resistance and critical current density of graphitic layer-capped Cu interconnects were improved by 2.8% and 5.2%, respectively. The lifetime of graphitic layer-capped Cu interconnects under a constant current stress was improved by 223%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
