Abstract
GaAs Schottky Diode FET Logic Divide-by 8 circuits have been characterized for transient response when exposed to 20 ns FXR pulses at 25°C. A logic upset threshold of about 108rad/s was observed. At dose rates of 2 × 1010rads/s, functional operation was restored in 5 µs. A discussion of logic upset mechanisms is presented, attempting to explain both short and long term recovery observations.
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