Abstract
The possibility of using semiconductor single crystals (Si, GaP, etc.) as calorimeters for pulsed heat flux measurements is discussed. The method of laser interferometric thermometry in the reflected light at a wavelength of 1.15 μm makes it possible to detect changes δθ≈2×10−5 K in the temperature of a 1-mm-thick Si single crystal. The sensitivity of a calorimeter with laser readout is sufficient for detection of the absorbed energy δE≈15 μJ/cm2 and is independent of the Si plate thickness. The method for selecting the working point in the resonance curve for achieving maximum sensitivity in detection of pulse fluxes is discussed.
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