Pulsed $I_{d}$– $V_{g}$ Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling

Abstract

The pulsed current-voltage (I-V) measurement technique with pulse times ranging from ~17 ns to ~6 ms was employed to study the effect of fast transient charging on the threshold voltage shift DeltaV t of MOSFETs. The extracted DeltaV t values are found to be strongly dependent on the band bending of the dielectric stack defined by the high-kappa and interfacial layer dielectric constants and thicknesses, as well as applied voltages. Various hafnium-based gate stacks were found to exhibit a similar trap density profile.