Abstract
Pulsed electron beam annealing of phosphorus-implanted CuInS2 has been found to be an efficient method in p-type doping of CuInS2. A sheet resistance as low as 10.1 Ω/⧠, a sheet carrier concentration as high as 2.6×1016 cm−2, and a hole mobility as high as 499 cm2/V s have been obtained. The irradiation energy density for the best doping condition was determined to be in the range ∼11–13 J/cm2. Using Van der Pauw/Hall technique in conjunction with a chemical etching technique, effective carrier concentration profiles have been determined with a maximum carrier concentration of 9×1019 cm−3. Excellent p-n CuInS2 homojunctions have been fabricated by electron beam pulse annealing with an ideality factor of 1.75.
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