Pulsed electrodeposition of Cu2ZnSnS4 thin films: Effect of pulse potentials

Abstract

Cu2ZnSnS4 (CZTS) thin films are electrodeposited on Mo substrate using pulsed electrodeposition (PED) at different pulse potentials. The pulse potential (V1) is varied from 0V/SCE to −0.9V/SCE and V2 fixed at −1.1V/SCE. The effects of pulse potentials on the properties of CZTS thin films are investigated. Formation of secondary phases along with CZTS phase is evident for films deposited at low pulse potentials. The secondary phases seem to be reduced with increase in pulse potentials. The morphology of CZTS films is systematically evolved from agglomerated grains to compact one with increase in pulse potentials. The film deposited using optimized pulse potentials (V1 – −0.9V/SCE and V2 – −1.1V/SCE) exhibit prominent CZTS phase with nearly stoichiometric composition and has compact morphology with optical band gap energy of 1.46eV.