Abstract

CuInSe2 (CIS) and Cu(In,Ga)Se2 (CIGS) semiconductors are the most studied absorber materials for thin films solar cells due to their direct bandgap and large absorption coefficient. The highly efficient CIGS devices are often fabricated using expensive vacuum based technologies; however, recently electrodeposition has been demonstrated to produce CIGS devices with high efficiencies and it is easily amenable for large area films of high quality with effective material use and high deposition rate. In this context, this chapter discusses the recent developments in CIS and CIGS technologies using electrodeposition. In addition, the fundamental features of electrodeposition such as direct current, pulse and pulse-reverse plating and their application in the fabrication of CIS and CIGS films are discussed. In conclusion, the chapter summarizes the utilization of pulse electrodeposition for fabrication of CIS and CIGS films while making a recommendation for exploring the group’s unique pulse electroplating method.

Highlights

  • The present day’s global energy production is mostly accomplished from the fossil fuels; the inherent problems associated with the use of fossil fuels such as their limited availability and the environmental issues force the mankind to look for alternative solutions for future energy supply

  • Electrodeposition is a versatile technique for the growth of semiconductor thin films on large areas with a very low capital investment

  • Considering the state of energy requirement, it is pertinent to explore this low cost technique for production of copper indium selenide (CIS) and copper indium gallium selenide (CIGS) semiconductor films which are the potential candidates for application in solar photovoltaics

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Summary

Introduction

The present day’s global energy production is mostly accomplished from the fossil fuels; the inherent problems associated with the use of fossil fuels such as their limited availability and the environmental issues force the mankind to look for alternative solutions for future energy supply. Thin-film CIGS solar cells with power conversion efficiencies over 23% have been demonstrated, the vacuum-based processes used therein pose cost and technological barriers in the production of PV modules With this requirement in mind, development of low-cost methods to fabricate CIGS has become an intensively pursued goal and a variety of solution-based approaches have been demonstrated. The efficiency gap between vacuum and non-vacuum deposited CIGS has been reduced in past years and processes from the above categories have reported cells with efficiencies of 15–17%, thereby, showing promise for commercialization Among these methods, electrochemical deposition is the most extensively explored technique for the deposition of CIGS absorber layers and has witnessed high efficiency devices [20–23], and will be discussed in detail

Electrodeposition
Direct current (DC) Electrodeposition
Pulse electrodeposition
Pulse reverse electrodeposition
Electrodeposition of ternary/quaternary chalcopyrites
Pulsed electrodeposition of CIS and CIGS films: case studies
Study I: pulse electrodeposition of CuInSe2 films
Study II: comparison of direct current and pulse electrodeposited CIGS films
Study III: sequential pulsed electrodeposition of CIGS thin-films
Findings
Conclusions
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