Pulse switching characteristics of MAGTs for pulsed power applications

Abstract

AbstractFor pulsed power systems such as lasers and accelerators, semiconductor switches with their longer service life have actively been developed as replacements for thyratrons. The MOS‐driven thyristors are suitable for pulsed power applications because they have high‐power handling and fast turn‐on capabilities. The MOS‐assisted gate‐triggered thyristor (MAGT), designed especially for pulsed power, is a promising candidate in this field.This paper presents the results of an investigation into the performance of MAGTs. Using a pulse‐forming network (PEN), the pulse‐switching characteristics and the dynamic resistance characteristics during the current flow are investigated. A maximum current density of 21.8 kA/cm2 and di/dt of 106 kA/μs/cm2 with 1550‐V anode voltage on a single‐shot basis were obtained. Furthermore, a life test with 109 shots at a high repetition rate showed no degradation in the observed characteristics. Based on these experimental results, a carrier flow model of MAGT during turn‐on process is proposed and the turn‐on mechanism is considered.