Abstract
A study has been made of the time response of heterostructure avalanche photodiodes for InGaAs and InP/InGaAs material systems. A transfer/scattering matrix method, where the matrix parameters are related to the ionization coefficients, has been used. A time domain study has been carried out to find the time variation of electron and hole number densities and currents. >
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Schedule a callMore From: Journal of lightwave technology : a joint IEEE/OSA publication
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