Abstract
Pulse-periodic operation was attained in multicell semiconductor lasers made of ZnO, ZnSe, CdS, and GaAs crystals. At room temperature of the active element when the pulse repetition frequency was 50 Hz and the pulse duration was 8 nsec, the following values of the average radiation power were achieved for the first time: 25 mW (ZnO), 22 mW (ZnSe), 125 mW (CdS), and 90 mW (GaAs). Replacement of the active element provided means for discrete tuning of the emission wavelength. These output powers were achieved using a compact portable electron gun.
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