Abstract
We develop a theory of pulse conduction in percolation type materials such as noncrystalline semiconductors and nano-metal compounds. For short voltage pulses, the corresponding electric currents are inversely proportional to the pulse length and exhibit significant nonohmicity due to strong local fields in resistive regions of the percolation bonds. These fields can trigger local switching events incrementally changing bond resistances in response to pulse trains. Our prediction opens a venue to a class of multi-valued nonvolatile memories implementable with a variety of materials.
Highlights
Nonvolatile memory cells are often based on disordered materials, noncrystalline or compound, with percolation conduction
One distinct feature introduced here is that local electric fields in percolation bonds can be strong enough to structurally modify the underlying material through nonvolatile changes in its local resistivities and, percolation with plasticity (PWP)
We have developed a theory of pulse non-ohmic transport in macro-bonds of percolation clusters
Summary
Nonvolatile memory cells are often based on disordered materials, noncrystalline or compound, with percolation conduction Percolation in these systems is due to exponentially strong variations in local resistivities, and the macroscopic conductivity is dominated by the bonds of the corresponding smallest random resistors allowing electric connectivity. One distinct feature introduced here is that local electric fields in percolation bonds can be strong enough to structurally modify the underlying material through nonvolatile changes in its local resistivities and, percolation with plasticity (PWP). Another feature introduced here to percolation analyses is the nonstationary pulse-shaped electric bias characteristic of nonvolatile memory operations. It paves a way to PWP multi-valued memory operated in the pulse regime and implementable with a variety of materials
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