Abstract
A previous study of the pulse-height defect (PHD) for heavy ions (Ni, Cu, Ag, Au and U) in a silicon surface-barrier detector has been extended to include 10 different detectors and higher energy ions. Iodine was also added to the list of ions studied. All of the low-resistivity, heavy-ion type detectors showed nearly identical response characteristics. The PHD for these detectors appears to be a general phenomenon that can be described as the sum of a simple energy loss in the gold surface layer, a calculated nuclear-stopping defect, and a residual defect expressed as a linear dependence on the difference between the electronic stopping power of the ion in silicon and a constant critical value. High resistivity detectors exhibited larger residual defects, but qualitatively similar behavior.
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