Pulse height analysis using Si-pin diode of x-ray irradiated from a 2.45 GHz electron cyclotron resonance multicharged ion source

Abstract

Production of multicharged ions is experimentally studied on an electron cyclotron resonance (ECR) source. The ECR zone for a microwave frequency of 2.45 GHz is formed at the bottom of a mirror trap. The x-ray spectra are measured by Si-pin diode detector in the various operating conditions. Available energy range of the x-ray measurement is several keV approximately several tens keV. Measurements are carried out at either line of sight including the ECR zone along the geometrical axis or at off-ECR zone from the side wall. The temperatures determined at both positions are about 2–3 keV from the observed spectrum with assuming nonrelativistic maxwellian plasma. The intensities of Ar Kα and bremsstrahlung radiation correlate to pressure and microwave power dependence of multicharged-ion production. But the dependence of the temperature is not clear. Therefore the multicharged-ion production largely depends on an abundance of high energy electrons rather than the change of the temperature of them in this energy region; and it is suggested that the emission profiles of the x-ray radiation peaks at the center of the mirror at the low pressure.