Pulse characteristics from a MoSe2Q-switched Nd:GdVO4 laser at 1.3 µm.

Abstract

Few-layered ${{\rm MoSe}_2}$MoSe2 nanosheets were prepared by the low-cost, simple liquid-phase exfoliation method. The ${{\rm MoSe}_2}$MoSe2 nanosheets possessed the modulation depth of 16.5% with a saturation intensity of ${0.84}\;{{\rm MW/cm}^2}$0.84MW/cm2 at 1.34 µm, indicating the performance as the saturable absorber. The passively $Q$Q-switched c-cut ${\rm Nd}:{{\rm GdVO}_4}$Nd:GdVO4 laser at 1.34 µm was demonstrated with the few-layered ${{\rm MoSe}_2}$MoSe2 saturable absorber for the first time. The minimum pulse duration of 420 ns at a repetition rate of 238 kHz could be obtained. In order to significantly reduce the pulse duration, dual-loss modulation simultaneously using both ${{\rm V}^{3 + }}:{\rm YAG}$V3+:YAG and ${{\rm MoSe}_2}$MoSe2 saturable absorbers was implemented. The pulse duration was compressed to a 82.4 ns pulse at a repetition rate of 409.3 kHz at the pump power of 10.66 W. The experimental results provide a solid fundament for the short pulse generation with ${{\rm MoSe}_2}$MoSe2 saturable absorber at 1.34 µm.