Abstract

In this work we report on theoretical and experimental investigation of a multistability phenomenon in initially curved flexible clamped-clamped microbeams actuated in-plane by a distributed electrostatic force and fabricated from silicon on insulator (SOI) wafer using a deep reactive ion etching (DRIE) process. Theoretical results provided by a reduced order (RO) model of the shallow Euler-Bernoulli arch and backed by experiments indicate that in the device with non-monotonous stiffness-deflection dependence the voltage-deflection characteristic may have two maxima implying the existence of multiple stable configurations at the same voltage while the range of stable deflections is significantly larger and pull-in voltage is lower than in a straight beam.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.