Abstract
Publisher's Note: “Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors” [Appl. Phys. Lett. <b>123</b>, 262107 (2023)
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
