Abstract
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Publisher’s Note: “Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes” [AIP Advances 8, 015005 (2018)]
All online versions of the article were corrected on 16 March 2018
ANazeer Muhammad: Corresponding Author Electronic mail: nazeermuhammad@ciitwah.edu.pk
Summary
Publisher’s Note: “Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes” [AIP Advances 8, 015005 (2018)].
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