Abstract

First Page

Highlights

  • Publisher’s Note: “Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes” [AIP Advances 8, 015005 (2018)]

  • All online versions of the article were corrected on 16 March 2018

  • ANazeer Muhammad: Corresponding Author Electronic mail: nazeermuhammad@ciitwah.edu.pk

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Summary

Introduction

Publisher’s Note: “Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes” [AIP Advances 8, 015005 (2018)].

Results
Conclusion

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