Abstract
High power impulse magnetron sputtering (HiPIMS) technology with extremely high target ionization rate is employed to deposit Ni3+-rich NiO films with enhanced p-type conductivity. However, the HiPIMS technique possesses a significant disadvantage; that is, its low deposition rate. In order to overcome this drawback, superimposed HiPIMS ( HiPIMS+MF) power supply was employed in this work. The influence of the MF pulse duration on the films’ composition, morphology, chemical status, structure and optoelectronic properties is investigated here. The results show that compared with pure HiPIMS deposition, the deposition rate of superimposed HiPIMS technology is significantly improved. Meanwhile, the advantages of HiPIMS with high ionization rates are retained. Ni3+-rich NiO films are produced using superimposed HiPIMS deposition. Especially in HiPIMS+MF 3X deposition mode, a relatively low resistivity of 3.41 Ω cm with high deposition rate (2.32 Å/s) is realized.
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