Abstract
In this work, high performance negative capacitance (NC) p-type FinFETs (p-FinFETs) with a 3-nm-thick ferroelectric (FE) hafnium zirconium oxides (Hf 0.5 Zr 0.5 O 2 ) layer are fabricated based on a conventional high-κ metal gate (HKMG) FinFETs fabrication flow. The devices show improved drain induced barrier lowering (DIBL) and subthreshold swing (SS) values compared with those of conventional FinFETs with gate lengths (L G s) from 20 nm to 500 nm.
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