Abstract
Residual doping of InP layers grown at low temperature by atomic layer molecular beam epitaxy (ALMBE) has been reduced down to ̃1016cm-3 by control of phosphorus pulses, and then, p-type InP layers doped with Be have been grown at substrate temperatures of 305–340°C. Epilayers show low compensation and mobilities that are comparable to bulk p-type InP.
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