P-Type doping with arsenic in (2 1 1)B HgCdTe grown by MBE

Abstract

The results of arsenic incorporation in HgCdTe layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-HgCdTe was carried out by a method called planar doping. Arsenic was successfully incorporated during the MBE growth as acceptors. Result suggests that most of the arsenic incorporates as an active acceptor at the MBE growth temperature. These findings are very promising for MBE-HgCdTe technology. Some layers show enhanced p-type mobilities with no carrier freeze-out at low temperatures. These results are very promising for in situ fabrication of infrared devices using HgCdTe material.