Abstract
Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with 2° offcut towards 〈110〉 at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as 9×10 17 cm -3 . In addition, the reduction of GaSb lattice parameter with Be doping was studied.
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Schedule a callMore From: JSTS:Journal of Semiconductor Technology and Science
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