Abstract
The transport properties of as-deposited and rapid thermal annealed phosphorus-doped ZnO films grown by pulsed laser deposition are reported. As-grown ZnO:P samples show n-type characteristics, presumably due to the formation of anti-site PZn defects. Rapid thermal annealing yields a carrier type conversion from n- to p-type for the ZnO:P films grown at ~ 700ºC; samples grown at substantially lower or higher temperatures tend to remain n-type even after thermal annealing process. The properties and behavior of the n-to-p conversion is most consistent with the formation of PZn-2VZn as the active acceptor state. Research efforts have included the formation and characterization of ZnO pn junctions on c-plane sapphire. Using the p-type ZnO:P films, we have realized near band edge light emission from ZnO:P/ZnMgO/ZnO/ZnMgO/ZnO:Ga epitaxial heterostructures grown on c-plane sapphire.
Published Version
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