Abstract
The vertical-cavity surface-emitting laser (VCSEL) operating with low threshold current is a promising way to realize future parallel optical interconnects. In this study, we propose a novel structure of p-type delta-doped InGaAs/GaAs quantum wells for low-threshold, high-speed VCSELs. Edge-emitting lasers having p-type delta-doped quantum wells were grown by metal-organic chemical-vapor deposition and a low-threshold current density of 152 A/cm2 (51 A/cm2/well) was realized. We also fabricated p-type delta-doped quantum well InGaAs/GaAs VCSELs with a low-resistance GaAs/AlAs distributed Bragg reflector, and achieved a low threshold current of 0.37. Further threshold reduction by controlling the doping concentration in the p-type delta doped layers is expected. ©1999 Scripta Technica, Electron Comm Jpn Pt. 2, 82(4): 54–60, 1999
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