Abstract
Abstract P-type CdTe films with a resistivity of about 102 Ω cm were prepared by evaporating cadmium and tellurium from two separate crucibles onto heated glass substrates. P-type doping was obtained by directing to the substrate neutral high energy nitrogen atoms shot from an atomic gun during the CdTe film growth. The best results were obtained when the substrate temperature was kept at 350°C and the ratio between the fluxes of cadmium and tellurium was larger than 2.0. Back-wall CdS/CdTe thin film solar cells prepared on nickel-covered glass substrates have so far exhibited an efficiency of about 5% without an antireflecting coating.
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