Pt/(InGa)2O3/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm.

Abstract

Ga2O3 is a popular material for research on solar-blind ultraviolet detectors. However, its absorption cutoff edge is 253 nm, which is not an ideal cutoff edge of 280 nm. In this work, by adjusting the ratio of In/Ga elements in the films, a high-quality (In0.11Ga0.89)2O3 film with an absorption cutoff edge of 280 nm was obtained, which owns a uniform surface and preferred orientation. On this basis, a solar-blind ultraviolet photovoltaic detector was constructed based on the Pt/(In0.11Ga0.89)2O3/n-Si heterojunction. When the device is exposed to 254 nm UV light, its open-circuit voltage (VOC) can reach 354 mV. Under 0 V bias, the device has a responsivity of 0.48 mA/W with a rise time of 0.47 s and a decay time of 0.37 s; under -7 V bias, the device achieves a responsivity of 16.96 mA/W with a rise time of 0.17 s and a decay time of 0.33 s. The spectral response characteristics of the device show that it has a selective response to solar-blind ultraviolet light (cutoff wavelength is 280 nm) with a rejection ratio (R254 nm/R310 nm), which is greater by more than two orders of magnitude. This work provides a good reference for adjusting the band gap of Ga2O3-based films and broadening their application fields.