Abstract
Low Ohmic contact layers with the specific contact resistance of 4.5×10-5 Ω·cm2 were fabricated on the organic layer surface of PTCDA/P-Si photodetector chip. The electronic states of the interface of Al/Ni/ITO structure Ohmic contact layer were investigated using X-ray photoelectron spectroscopy (XPS). In ITO, In3d and Sn3d arise two peaks of split level, respectively. They are the binding energy of In and Sn atom located in oxidizing environment. Ni2p has two spectra peaks of Ni2p(1) and Ni2p(2). The lower binding energy location is Ni2p(1) which is excited by X-ray. It indicates that no chemical reaction happens between Ni and ITO layer, and the formation of A12O3 has been prevented. As for Ni2p(2) peak, it indicates that Al3Ni alloy phase has formed,which is good for the formation of low resistance Ohmic contact layer. ©, 2014, Faguang Xuebao/Chinese Journal of Luminescence. All right reserved.
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