Abstract

将HI-13北京串列加速器次级束流线产生的放射性核素 7Be分别注入到天然Pt和Al中, 利用两个高纯锗探测器同时测量 7Be 经由7Li第 一激发态衰变后跃迁到基态产生的478 keVγ射线产额随时间的变化, 结果在实验误差范围内（ 差别, 讨论了这两种材料的电子亲和势及有效电子密度与EC衰变率的关系。 We measured the variation of the decay rate of 7Be implanted in Pt and Al host materials by detecting the 478 keV γ ray emitted from the first excited state of 7Li which is produced by EC decay of 7Be with two HPGe detectors simultaneously, and found no difference of 7Be decay rate in Pt from that in Al within our experimental error ( of the decay rate variation with the electronic affinities and effective electron densities near the implanted ions in the two different host materials.

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