Abstract
In this letter, we fabricated Schottky barrier diodes (SBDs) using n-type zinc gallium oxide (n-ZnGa2O4) single-crystal substrates, which were grown from the melt by the vertical gradient freeze (VGF) method. X-ray diffraction rocking curve and Laue diffraction results indicate the good crystal quality. The electrical properties of SBDs fabricated on substrates with two doping concentrations are systematically investigated. Heavily-doped (HD) SBDs exhibit lower differential specific on-resistance (~1.13 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm2) and lower turn-on voltage (~0.16 V) while the lightly-doped (LD) SBDs exhibit better ideality factor (1.17), rectification characteristics (on/off ratio ~1011) and lower reverse leakage. In addition, we separately tested the electrical properties of the two devices at different temperatures (298 K-473 K). The results of varying temperature show that LD-SBDs have better temperature stability in smaller variation of ideality factor and barrier height with temperature. Based on these experimental results, this work demonstrates the great promise of ZnGa2O4 materials to fabricate high-performance power devices.
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