Abstract
Abstract The mechanism of TiN barrier metal oxidation of Pt/TiN electrodes are investigated for planarized stacked memory utilizing lead zirconate titanate (PZT). Thinner (<100 nm) and highly oriented platinum films are required in gigabit scale ferroelectric nonvolatile memories whose capacitor size is comparable to PZT grain size. Oxygen diffusivity to oxidize TiN is found to depend on the Pt film thickness. In cross-sectional TEM images of PZT/Pt/TiN/Si, titanium oxide is observed beneath the Pt grain boundary. The oxygen is diffused through the Pt grain boundary under heat treatment in an oxygen atmosphere for crystallization of PZT films, and oxidizes the underlying TiN barrier metal.
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