Pt thin films prepared by low energy plasma sputtering

Abstract

Platinum thin film has been prepared by low energy plasma sputtering deposition. Surface smoothness, stress in the film, crystal grain size and crystal orientation have been investigated for target voltages between 10 and 500 V. The effect of substrate temperature has also been studied. A minimum roughness of 1.1 nm was obtained with voltage of 20 or 30 V at room temperature. Auger analysis suggests that the deposition mechanism at 30 V is similar to the layer-by-layer (two-dimensional) deposition, while that at 100 V is significantly different. The formation of a very smooth surface is thought to be related to the layer-by-layer deposition process. The (111) oriented thin film was obtained at the target voltage of 30 V at room temperature.