Abstract
Nanogap electrodes are expected for studying the electrical properties of single molecules and nanoparticles, and its application to the non-volatile memories. In this study, we proposed the fabrication process for Pt nanogap by combining an ultraviolet nanoimprint lithography (UV-NIL) and a nanowire-breakdown technique. The 300-nm-wide Pt nanowire pattern was formed on silicon oxide layer by two layer lift-off UV-NIL using alkali soluble polymer. The Pt nanogap with a couple of nanometers was fabricated by controlling the step voltage applied to nanowire electrodes. We demonstrated the switching effects of the Pt nanogap. It was confirmed the switching operations of 100 cycles and obtained the high resistance ratio of over 102.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
