Abstract

Nanogap electrodes are expected for studying the electrical properties of single molecules and nanoparticles, and its application to the non-volatile memories. In this study, we proposed the fabrication process for Pt nanogap by combining an ultraviolet nanoimprint lithography (UV-NIL) and a nanowire-breakdown technique. The 300-nm-wide Pt nanowire pattern was formed on silicon oxide layer by two layer lift-off UV-NIL using alkali soluble polymer. The Pt nanogap with a couple of nanometers was fabricated by controlling the step voltage applied to nanowire electrodes. We demonstrated the switching effects of the Pt nanogap. It was confirmed the switching operations of 100 cycles and obtained the high resistance ratio of over 102.

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