Pt/LiNbO3/AlN/Si(100) 구조를 이용한 MFIS 커패시터의 전기적 특성

Abstract

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO<TEX>$_3$</TEX>/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO<TEX>$_3$</TEX> films. The typical dielectric constant value of LiNbO<TEX>$_3$</TEX> film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10<TEX>$^{-9}$</TEX> A/cm<TEX>$^2$</TEX> order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P<TEX>$_{r}$</TEX>) and coercive filed(Ec) values were about 1.2 <TEX>$\mu$</TEX>C/cm<TEX>$^2$</TEX> and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10<TEX>$^{11}$</TEX> switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.