Abstract
Low platinum-germanide-Schottky barrier diodes are fabricated via the incorporation of dopants by diffusion. A phosphorous spin-on-dopant resist is used for the formation of a highly doped surface layer in a rapid thermal annealing process, prior to the formation of platinum-germanide Schottky barrier diodes. For rapid diffusion processes above 580 {degree sign}C ohmic contact behavior is found while evidence is given for a lowered effective Schottky-barrier height.
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