Abstract
In order to observe the state of Integrated Gate Commutated Thyristor(IGCT) in inverter circuit and analyze the reason of its breakdown, a single 2T-3R subcircuit model of IGCT is used in Personal Simulation Program with IC Emphasis(PSPICE) environment to simulate an IGCT inverter unit of a 6kV/2MVA frequency converter. Simulation results show that when the stray inductance in inverter circuit is large, high forward blocking peak voltage will cause the breakdown of IGCT. This problem is solved by installing an absorption capacitor.
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