PSPHV: A Surface-Potential-Based Model for LDMOS Transistors

Abstract

This article presents PSPHV, a surface-potential-based compact model for laterally diffused MOS (LDMOS) transistors. PSPHV includes a new drain voltage scaling technique that enables accurate modeling of saturation in transistors with nonuniform lateral doping; gate bias-dependent interface charge, which models the gradual channel turn- ON seen in devices with halo doping; internal drain bias clamping, which eliminates the capacitance spikes seen in most existing LDMOS models; and a new avalanche current model for the drift region that accounts for the Kirk effect. PSPHV models the drain expansion effect and diode reverse recovery and is verified against experimental data.