PSP-Equivalent Model for Double-Gate and Surrounding-Gate Field Effect Transistors for Circuit Simulation

Abstract

We introduce a compact core model for double-gate (DGFET) and surrounding-gate (SGFET) MOSFETs designed for circuit simulations. Despite its high precision, the model is crafted to retain the same analytic formulation of the industry standard Pennsylvania State and Philips (PSP). Instead of linearizing the drain current as in the PSP model, we employ a quadratic symmetric polynomial interpolation of the charge in the channel. This eliminates the need for cumbersome derivatives, simplifications, and intricate coding when integrating into a circuit simulator, thereby preventing singularities during numerical iterations. Moreover, thanks to its mathematical formulation equivalent to PSP, this model simplifies the coding of terminal charges, capacitances, potentials, and electric fields in the channel within circuit simulators. We validate the accuracy of the model through comparisons with numerical solutions and experiments from the literature.