Abstract
A new high performance field-effect transistor using step-doped n-In0.15Ga0.85As channels was fabricated and demonstrated. For a 1 × 100 µm2 device, a high gate breakdown voltage of 15 V, a maximum drain saturation current of 735 mA/mm, a maximum transconductance of 200 mS/mm, and a wide gate voltage range > 3 V, with the transconductance > 60 mS/mm, are obtained.
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