Abstract
A bipolar tunneling transistor in which ohmic contact is made to the strained p/sup +/ InGaAs quantum well of a double-barrier resonant-tunneling structure is discussed. The heterojunction transistor consists of an n-GaAs emitter and collector, undoped AlGaAs tunnel barriers, and a pseudomorphic p/sup +/ InGaAs quantum-well base. By making ohmic contact to the p-type quantum well, the hole density in the quantum-well base is used to modulate the base potential relative to the emitter and collector terminals. With control of the quantum-well potential, the tunneling current can be modulated by application of a base-to-emitter potential. The authors detail the physical and electrical characteristics of the device. It is found that the base-emitter voltages required to bias the transistor into resonance are well predicted by a self-consistent calculation of the electrostatic potential.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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