Abstract
AbstractWe report on the synthesis of SiGe layers on silicon by using a pulsed laser processing technique (Gas Immersion Laser Doping) where GeCl4 gas molecules are adsorbed on the surface and further incorporated into the Si top layer by a pulsed laser induced melt/regrowth process. In‐situ real‐time measurements of the transient reflectivity of a laser diode reveal that SiGe is formed. Structural characterization of the SiGe layers by X‐ray diffraction evidences that pseudomorphic SiGe layers are obtained. Moreover, we demonstrate that Ge concentration saturates at about 16% in the strained layers and that a relaxation process occurs when samples are exposed to 4000 laser pulses or more (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
